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| HGTP20N36G3VL,HGT1S20N36G3VLS, HGT1S20N36G3VL 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs March 2004 Features * Logic Level Gate Drive * Internal Voltage Clamp * ESD Gate Protection * TJ = 175oC * Ignition Energy Capable Packages JEDEC TO-220AB E C G COLLECTOR (FLANGE) JEDEC TO-263AB Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. PACKAGING PART NUMBER HGTP20N36G3VL HGT1S20N36G3VL HGT1S20N36G3VLS PACKAGE TO-220AB TO-262AA TO-263AB BRAND 20N36GVL 20N36GVL 20N36GVL COLLECTOR (FLANGE) G E COLLECTOR (FLANGE) JEDEC TO-262AA E C G Symbol COLLECTOR The development type number for this device is TA49296. R1 GATE R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP20N36G3VL HGT1S20N36G3VL HGT1S20N36G3VLS 395 28 37.7 26 10 21 16 500 150 1.0 -40 to +175 260 6 Collector-Emitter Bkdn Voltage At 10mA, RGE = 1k. . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25 At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . .IC100 Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . . ISCIS At L = 2.3mH, TC = +150oC . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS Power Dissipation Total At TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Electrostatic Voltage at 100pF, 1500 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD NOTE: May be exceeded if IGEM is limited to 10mA. (c)2004 Fairchild Semiconductor Corporation UNITS V V A A V A A mJ W W/oC o C o C KV HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1 Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage SYMBOL BVCES TEST CONDITIONS IC = 10mA, VGE = 0V TC = +175oC TC = +25oC TC = -40oC Collector-Emitter Breakdown Voltage BVCER IC = 10mA VGE = 0V RGE = 1k TC = +175oC TC = +25oC TC = -40oC Gate-Emitter Plateau Voltage VGEP IC = 10A VCE = 12V IC = 10A VGE = 5V VCE = 12V IC = 10A RG = 1K IC = 10mA VCE = 250V VCE = 250V Emitter-Collector Leakage Current Collector-Emitter Saturation Voltage IECS VCE(SAT) VEC = 24V IC = 10A VGE = 4.5V TC = +25oC TC = +25oC MIN 345 355 355 320 335 335 TYP 380 385 390 360 365 370 3.7 MAX 415 415 425 395 395 410 UNITS V V V V V V V Gate Charge QG(ON) - 28.7 - nC Collector-Emitter Clamp Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current BVCE(CL) TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +25oC 330 360 415 V BVECS ICES 28 1.1 36 1.3 1.25 1.6 1.9 1.6 5 250 1.0 1.6 1.5 1.9 2.4 2.3 V A A mA V V V V V IC = 20A VGE = 5.0V Gate-Emitter Threshold Voltage VGE(TH) IC = 1mA VCE = VGE Gate Series Resistance Gate-Emitter Resistance Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load R1 R2 IGES BVGES tD(OFF)I + tF(OFF)I VGE = 10V IGES = 2mA 10 330 12 75 20 500 14 30 1000 k A 30 V s IC = 10A, RG = 25, L = 550H, RL = 26.4, VGE = 5V, VCL = 300V, TC = +175oC L = 2.3mH, VG = 5V, RG = 1K TC = +150oC TC = +25oC - 15 Inductive Use Test ISCIS 16 21 - - 1.0 o A A C/W Thermal Resistance RJC (c)2004 Fairchild Semiconductor Corporation HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1 Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Typical Performance Curves ICE, COLLECTOR to EMITTER CURRENT (A) 50 PULSE DURATION = 250s, DUTY CYCLE <0.5%, VCE = 10V 40 ICE, COLLECTOR to EMITTER CURRENT (A) 100 VGE = 10V 80 5.0V 60 4.5V 40 4.0V 3.5V 20 PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = +25oC 0 0 2 4 6 8 10 VCE, COLLECTOR to EMITTER VOLTAGE (V) 7V 30 TC = 175oC 20 TC = 25oC 10 TC = -40oC 0 1 2 3 4 5 6 VGE, GATE to EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS ICE , COLLECTOR to EMITTER CURRENT (A) ICE , COLLECTOR to EMITTER CURRENT (A) 40 TC = 175oC VGE = 5.0V 50 VGE = 4.5V 40 -40oC 25oC 30 VGE = 4.5V 20 VGE = 4.0V 30 175oC 20 10 10 0 0 2 3 VCE(SAT) , SATURATION VOLTAGE (V) 1 4 0 0 1 2 3 4 5 VCE(SAT) , SATURATION VOLTAGE (V) FIGURE 3. COLLECTOR to EMITTER CURRENT vs SATURATION VOLTAGE FIGURE 4. COLLECTOR to EMITTER CURRENT vs SATURATION VOLTAGE 1.4 VCE(SAT) , SATURATION VOLTAGE (V) 2.2 VCE(SAT) , SATURATION VOLTAGE (V) ICE = 10A ICE = 20A 2.1 2.0 1.9 1.8 1.7 1.6 1.5 -25 25 75 125 175 -25 25 75 125 175 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) VGE = 4.5V 5.0V VGE = 4.5V VGE = 4.0V VGE = 4.0V 1.3 VGE = 4.5V 1.2 VGE = 5.0V 1.1 FIGURE 5. SATURATION VOLTAGE vs JUNCTION TEMPERATURE FIGURE 6. SATURATION VOLTAGE vs JUNCTION TEMPERATURE (c)2004 Fairchild Semiconductor Corporation HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1 Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Typical Performance Curves (Continued) VTH, NORMAILZED THRESHOLD VOLTAGE (V) ICE, COLLECTOR-EMITTER CURRENT (A) 40 VGE = 5.0V 30 1.2 ICE = 1mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -25 25 75 125 175 TJ , JUNCTION TEMPERATURE (oC) 20 10 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) FIGURE 7. COLLECTOR-EMITTER CURRENT vs CASE TEMPERATURE FIGURE 8. NORMALIZED THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 105 104 VECS = 20V 10 3 18 VCL= 300V, RGE = 25, VGE = 5V, L= 550H t(OFF)I, TURN OFF TIME (s) LEAKAGE CURRENT (A) 16 ICE = 6A, RL= 50 14 102 101 VCES = 250V 100 10-1 25 ICE =10A, RL= 30 12 10 50 75 100 125 150 175 25 50 TJ , JUNCTION TEMPERATURE (oC) ICE =15A, RL= 20 75 100 125 150 175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. LEAKAGE CURRENT vs JUNCTION TEMPERATURE 60 VGE = 5V, RG = 1K, VDD = 14V 50 EAS , ENERGY (mJ) 500 FIGURE 10. TURN-OFF TIME vs JUNCTION TEMPERATURE ICE , COLLECTOR-EMITTER CURRENT (A) 500 VGE = 5V, RG = 1K, VDD = 14V +25oC 400 40 30 +25oC 20 +150oC 10 300 +150oC 200 100 0 0 2 4 6 8 10 INDUCTANCE (mH) 0 0 1 2 3 INDUCTANCE (mH) 4 5 FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs INDUCTANCE (c)2004 Fairchild Semiconductor Corporation FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY vs INDUCTANCE HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1 Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Typical Performance Curves (Continued) ICE , COLLECTOR-EMITTER CURRENT (A) 60 50 40 30 +25oC 20 10 0 0 50 100 150 200 250 300 350 400 tCLP, TIME IN CLAMP (S) 1600 FREQUENCY = 1MHz 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 CRES 0 0 5 20 10 15 VCE , COLLECTOR-TO-EMITTER VOLTAGE (V) 25 COES CIES +150 C o FIGURE 13. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs TIME IN CLAMP 12 IG REF = 1.022mA, RL = 1.2, TC = +25oC 10 VCE = 12V 8 4 3 VCE = 8V VCE = 4V 5 VGE, GATE-EMITTER VOLTAGE (V) 6 FIGURE 14. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE (V) ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 PD 10-1 0.1 0.05 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC t2 t1 6 4 2 1 2 10-2 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 100 101 0 0 10 20 QG, GATE CHARGE (nC) 30 40 0 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 13. GATE CHARGE FIGURE 14. NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 350 ICER = 10mA BVCER , COLLECTOR-EMITTER BREAKDOWN VOLTAGE (V) 345 TC = 25oC AND 175oC 340 335 0 2 4 6 8 10 RGE , GATE-TO-EMITTER RESISTANCE (K) FIGURE 15.BREAKDOWN VOLTAGE vs GATE EMITTER RESISTANCE (c)2004 Fairchild Semiconductor Corporation HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1 Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Test Circuits RL 2.3mH VDD C 1/RG = 1/RGEN + 1/RGE RGEN = 50 10V E RGE = 50 E G DUT + L = 550H C RGEN = 25 5V RG DUT G VCC 300V - FIGURE 16. USE TEST CIRCUIT FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT (c)2004 Fairchild Semiconductor Corporation HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I9 |
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